Superior output and transmission properties are demonstrated in tellurium oxide-based amorphous p-type thin-film transistors (Se:Te = 1:4) processed with an optimal selenium alloying ratio. The ...
(Nanowerk News) Professor Yong-Young Noh from the Department of Chemical Engineering at Pohang University of Science and Technology (POSTECH), along with Dr. Ao Liu and Dr. Huihui Zhu, postdoctoral ...
A novel method that employs palladium to inject hydrogen into the deeply buried oxide-metal electrode contacts of amorphous oxide semiconductors (AOSs) storage devices, which reduces contact ...
Researchers from the Center for Research in Biological Chemistry and Molecular Materials (CiQUS) and Forschungszentrum Juelich discovered that oxide-based memristive devices can demonstrate tunable ...
The US, China and Japan are working on research and development in gallium oxide crystal growth and productionizing gallium oxide chips. The Gallium oxide chips can have a voltage resistance value 3 ...
Gallium oxide (Ga₂O₃) is a semiconductor material that could make electronic devices much more energy-efficient than current silicon-based technology. Electronic diodes require two types of ...
AI workloads need to position more memory that uses less power in ever-closer proximity to computational logic. That overriding imperative is driving new memory designs and new materials exploration ...
A semiconductor is a material or device that only conducts electricity under certain conditions. Some elements in the periodic table, such as carbon, silicon, and germanium, are intrinsic ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results