GaN Systems is claiming up to 96% power efficiency from a 200 + 200W (8Ω) Class-D stereo amplifier built around its gallium nitride power transistors. THD+N is under 0.03%, with further optimisation ...
With EPC’s EPC9083 development board, designers can evaluate the 200 V, 25 mΩ EPC2046 eGaN FET in a Class E amplifier design operating at up to 15 MHz for use in wireless power applications. All ...
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