Researchers from Cambridge University's Microelectronics Research Centre and Hitachi Cambridge Laboratory made progress on building a single-electron memory in CMOS. The group has put together a 3 X 3 ...
The AEFuse embedded, nonvolatile memory cores include what is said to be the first multiple-times-programmable (MTP) fuse fabricated in standard 0.25 µm and 0.18 µm CMOS processes. Offered as a ...
Researchers at Tohoku University have announced the demonstration of high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. The demand ...
As we enter the era of superintelligence and hyper-connected Fourth Industrial Revolution, the importance of high-density and high-performance memory is greater than ever. Currently, the most widely ...
A technical paper titled “CMOS-based Single-Cycle In-Memory XOR/XNOR” was published by researchers at University of Tennessee, University of Virginia, and Oak Ridge National Laboratory (ORNL). “Big ...
New technical paper titled “New ternary inverter with memory function using silicon feedback field-effect transistors” was published from researchers at Korea University. In this study, we present a ...
The big picture: If successfully scaled to industrial production, these chips could extend Moore's Law into the atomic domain by enabling far greater component density without incurring unsustainable ...
TetraMem Inc., a Silicon Valley–based semiconductor company developing analog in-memory computing (IMC) solutions, today ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results