DUBLIN--(BUSINESS WIRE)--The "Innovations in CMOS Sensors, Shutter Sensors, Thermal Imaging Camera Sensors, MEMS Sensors, and Gas Sensors" report has been added to ResearchAndMarkets.com's offering.

Creating a sensor-based IoT edge device is challenging, due to the multiple design domains involved (Analog, digital, RF, and MEMS). But, creating an edge device that combines the electronics using ...

A MEMS sensing IP has been licensed for a sensor fusion IC using a standard CMOS process, and that’s expected to dramatically reduce the cost and size compared to design solutions based on discrete ...

A new integrated poly-SiGe-based piezoresistive pressure sensor has been directly fabricated above 0.13 µm copper (Cu) -backend CMOS technology. This represents not only the first integrated poly-SiGe ...

NORTH ANDOVER, Mass. — Memsic Inc., a startup company that has developed and deployed CMOS-based MEMS accelerometers and sensors, has struck a marketing and sales agreement with Texas Instruments Inc.

Baolabs is now producing its NanoEMS CMOS microelectromechanical systems (MEMS) devices in volume on a standard CMOS production line. Barcelona, Spain: Baolabs is now producing its NanoEMS CMOS ...

To alleviate the drawbacks of quartz oscillator technology, classic microelectromechanical systems (MEMS) materials are now being used to fabricate three-dimensional resonating structures. These ...

Erfurt, Germany, May 10, 2005: X-FAB Semiconductor Foundries AG, the leading mixed-signal foundry specialist is now offering IP cores for MEMS pressure sensor technologies. With this novel concept ...

In the biopharmaceuticals sector, engineers have to precisely regulate the gases utilized in bioreactors to improve microbial growth and assure accurate mixing and distribution of biomass. Moreover, ...

Germany-based Bosch Sensortec, a subsidiary of Bosch, will not employ Taiwan CMOS foundry services to make its g-sensors (accelerometers) because its has 14-years of experience making MEMS and will ...

Creating a sensor-based IoT edge device is challenging, due to the multiple design domains involved. But, creating an edge device that combines the electronics using the traditional CMOS IC flow and a ...

(Nanowerk News) Imec realized an integrated poly-SiGe-based piezoresistive pressure sensor directly fabricated above 0.13 µm copper (Cu) -backend CMOS technology. This represents not only the first ...