Infineon Technologies AG has extended the CoolSiC Schottky 1200-V G5 diode portfolio by releasing a TO247-2 package. It promises higher efficiency than silicon diodes, and the expanded 8.7-mm creepage ...
Nisshinbo Micro Devices has announced the NT9000/NT9001/NT9002/ NT9003 series of dual diode devices designed for Wireless ...
Infineon Technologies AG has introduced the CoolSiC Schottky diode 2000 V G5, targeting industrial applications with higher power levels and minimized power losses. The CoolSiC Schottky diode is the ...
With a 2000-V breakdown voltage, Infineon’s IDYH80G200C5A CoolSiC Schottky diode suits systems with DC link voltages up to 1500 V. The Gen 5 silicon carbide (SiC) diode offers current ratings from 10 ...
PLANO, Texas--(BUSINESS WIRE)--Diodes Incorporated (Nasdaq: DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, ...
6/3/2003 Single Die MOSFET and Schottky Barrier Diode for DC-DC Converters To meet the requirement for greater integration of devices and ever-smaller 6/3/2003 Single Die MOSFET and Schottky Barrier ...
PLANO, Texas--(BUSINESS WIRE)--Diodes Incorporated (Nasdaq: DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, ...
Over the past decade, researchers have made many skin-like medical and environmental sensors. But adding stretchable wireless communication circuits to these sensors has been difficult. Those radio ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results