An advanced gate design could reshape EV and data center power systems.

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...

Think of an application for SiC power electronics and you’ll probably think of electric vehicles (EVs). After all, it’s the battery-powered automobile that’s driving the growth in sales of SiC MOSFETs ...

GaN-, and silicon-based power transistors, modules, and other basic building blocks for more robust, efficient, and ...

For decades, silicon has ruled as the undisputed leader in power electronics. But as silicon hits its performance limits, gallium-nitride (GaN) power devices are gaining ground. With faster switching ...

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, the future of next generation power systems, today introduced three SuperGaN® FETs ...

Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices, today announced a comprehensive licensing agreement with Renesas Electronics Corporation, ...

Gallium nitride (GaN) has emerged as a key semiconductor in the evolution of power electronics thanks to its wide bandgap, high critical electric field and superior carrier mobility. Recent advances ...

Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven ...

DUBLIN--(BUSINESS WIRE)--The "GaN Power Devices - Global Strategic Business Report" has been added to ResearchAndMarkets.com's offering. The global market for GaN Power Devices was estimated at US$346 ...

Gallium nitride (GaN) semiconductor devices must pass stringent robustness tests to survive extreme conditions with both high current and high voltage. Here, short-circuits survivability is the most ...