TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO:6503) announced today the coming launch of its T-series 2.0kV Insulated Gate Bipolar Transistor (IGBT) Module for Industrial Use, the ...
CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...
Compared with GTOs and IGCTs, IGBT modules offer the advantage of easier driving due to the MOS-gate and easier cooling due to a fully isolated package. Traction, industrial drive, and pulse power ...
For the PDF version of this article, click here. Proper gate drive is critical to the performance and reliability of insulated gate bipolar transistor (IGBT) modules. The gate driver must produce high ...
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