A new technical paper titled “Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement ...
Researchers at Stanford University and TSMC have shown that adding an ultra-thin Al 2 O 3 interlayer improves reliability and ...
Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.
The South Korean memory giant unveiled its new technology during the International Memory Workshop (IMW 2024) held from May 12-15 at the Walkerhill Hotel in the Gwangjin district of Seoul, South Korea ...
Samsung Electronics plans to open its new semiconductor research and development campus in mid-November. The installation of advanced equipment is set to take place from November 2024 onwards, aimed ...
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