As the number of DRAM stacks in high bandwidth memory (HBM) increases, there will be new developments in Through-Silicon Via (TSV) materials, focus rings and debonding technology used in this field.
The next generation of high-bandwidth memory, HBM4, was widely expected to require hybrid bonding to unlock a 16-high memory stack. A JEDEC move made that unnecessary with this generation, but it’s ...
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