MALVERN, Pa., Oct. 05, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new fourth-generation 600 V EF Series fast body diode MOSFET in the low profile PowerPAK® 10 ...
Thanks to their performance characteristics [1], [2], silicon carbide (SiC) power devices are establishing themselves on the market as valid replacements for MOSFETs and IGBTs based on silicon ...
MALVERN, Pa., Dec. 02, 2020 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new device in its fourth generation of 600 V EF Series fast body diode MOSFETs. Providing ...
SEOUL, South Korea, May 2, 2023 /PRNewswire/ -- Magnachip Semiconductor Corporation (MX) announced today that the Company has released a new family of 600V Super Junction Metal Oxide Semiconductor ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...
αMOS5 is AOS’s latest generation of high voltage MOSFET, and has been designed to meet the high efficiency and high-density needs for Quick Charger, Adapter, PC Power, Server, Industrial Power, ...
Sponsored by Texas Instruments: Ideal diodes and ORing controllers offer space-saving, scalable solutions to protect a system against reverse voltage or reverse current. They reduce the energy lost ...
Zetex has announced a synchronous rectifier controller for flyback converters. Combined with a discrete power Mosfet, the ZXGD3101T8 ‘zero point detector driver’ replaces Schottky and other diodes to ...
The good thing about being a field applications engineer is that you get to work on many different circuits, often all at the same time. While this is interesting, it also presents problems. Jumping ...
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