A new technical paper titled “APOSTLE: Asynchronously Parallel Optimization for Sizing Analog Transistors Using DNN Learning” was published by researchers at UT Austin and Analog Devices. “Analog ...

In this video from the EuroMPI’19, Mathieu Luisier presents: Massively Parallel Computer Aided Design of Nano-Transistors: When Physics Lets You Down. Moore’s scaling law is slowly coming to an end ...

Characteristics of enhancement-mode (e-mode) GaN, such as positive temperature coefficient of RDS(ON) and a temperature-independent threshold voltage, make them excellent candidates for paralleling.

The previous columns in this series discussed the benefits of eGaN® FETs and their potential to improve performance in a variety of applications. In this installment we will discuss the advantages of ...

Back in 1965, Intel cofounder Gordon Moore predicted that the semiconductor industry could double the number of transistors on a chip every 12 months (he later amended it to 24 months) for about the ...

How many remote controls do you have in your home? Don’t you wish all these things were better integrated somehow, or that you could add remote control functionality to a random device? It’s a common ...

TOKYO — NEC Corp. has developed a nitride semiconductor power transistor capable of 2.3-watt power amplification in the 30-GHz sub-millimeter band. The Japanese company claims this is a major advance ...