JST announces the successful development of a high-quality bulk GaN growth device based on the THVPE method, a development topic of the Newly extended Technology transfer Program (NexTEP). Development ...
In this project, a high-quality and large-diameter GaN wafer is developed to reduce energy and power losses in power devices and LEDs. Specifically, by reducing the crystal defects which affect the ...
Gallium nitride has become the de facto material in third-generation semiconductors. However, making GaN epi wafers in the quality you need and the thermal resistance you desire are challenges that ...
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